We are the Polish company Tara, we offer silicon ingots and plates from Ukraine Silicon ingots  semiconductor grade silicon ingots with diameter from 2” up to 8” in quantity more than 200 000kg per year. Basic parameters of silicon ingots for semiconductor application:Growth metod CZType/Dopant N-type /Phosphorus or Antimony or Arsenic doped P-type /Boron dopedDiameter from 2″ – to 8″Orientation (100) or (111) or (110) Resistivity 0,001 – 140 Ohm*cm Oxygen content <10*1017 at/cm3 (<20ppma) – standard(7-9)*1017 at/cm3 (14-18 ppma) – special Carbon content <10*1016 at/cm3 (<2ppma) – standard<5*1016 at/cm3 (<1ppma) – special Dislocation density <10cm-2 Silicon plates  semiconductor grade silicon plates with diameter from 2” up to 6” in quantity up to 500 000pcs per year. Also we have possibility to produce polished wafers with square and pseudosquare shape in accordance to customer’s specification. Our basic plates parameters meet SEMI M1-00 standard. Basic parameters of semiconductor grade silicon platesType/Dopant N-type /Phosphorus or Antimony or Arsenic doped P-type /Boron dopedDiameter 2″, 3″, 4″, 5″, 6″Diameter tolerance minimum ±0,3 mm standard ±0,5 mmOrientation )Resistivity 0,001 – 140 Ohm*cmTotal thickness variation for diameter 2″ for diameter 3″ for diameter 4″ for diameter 5″ for diameter 6″ Minimum: 5 microns 5 microns 5 microns 8 microns 15 microns Standard: 10 microns 10 microns 15 microns 15 microns 20 microns Bow for diameter 2″ for diameter 3″ for diameter 4″ for diameter 5″ for diameter 6″ Minimum: 20 microns 25 microns 30 microns 35 microns 50 microns Standard: 25 microns 30 microns 35 microns 40 microns 60 microns Surface As-cut, lapped, etched, one side and double side polishedOxygen content <10*1017 at/cm3 (<20ppma) – standard(7-9)*1017 at/cm3 (14-18 ppma) – specialCarbon content <10*1016 at/cm3 (<2ppma) – standard<5*1016 at/cm3 (<1ppma) – specialSincerely,- LTD."TARA"